STD4NB40 Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH™ MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
Turn-on Delay Time
t_r
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DD = 200 V, I_D = 2.5 A
R_G = 4.7Ω V_GS = 10 V
(see test circuit, Figure 3)
V_DD = 320V, I_D = 5 A,
V_GS = 10V
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
t_f
t_c
Off-Voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 320V, I_D = 5 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 4 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 5 A, di/dt = 100A/µs
V_DD = 100V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STD4NB40/STD4NB40-1
Min. Typ. Max. Unit
11
ns
8
ns
14.5
20
nC
7
nC
5.1
nC
Min.
Typ.
9
6
14
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
4
A
16
A
1.6
V
300
ns
1.6
µC
10.5
A
Safe Operating Area
Thermal Impedance
3/10