STD4NB40 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH™ MOSFET

STD4NB40
STD4NB40-1
N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD4NB40
400 V < 1.8 Ω
4A
s TYPICAL R_DS(on) = 1.47 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R_DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2001
Value
400
400
± 30
4
2.52
16
60
0.47
4
–65 to 150
150
(1) I_SD≤ 4A, di/dt≤200 A/µs, V_DD≤ V_(BR)DSS, Tj≤T_jMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/10