STD4NB25 Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL 250V - 0.95ohm - 4A - DPAK/IPAK PowerMESHO MOSFET

STD4NB25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 125 V ID = 3 A
RG = 4.7 Ω
VGS = 10 V
Qg
Total Gate Charge
VDD = 200 V ID = 6 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 200 V ID = 6 A
RG = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 6 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 ^oC
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
9
9
Max.
13
13
Unit
ns
ns
12
17
nC
7.5
nC
3
nC
Min.
Typ.
8
7
15
Max.
11
10
20
Unit
ns
ns
ns
Min.
Typ.
Max.
4
16
Unit
A
A
1.5
V
160
ns
720
nC
9
A
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