STD4NB25 Datasheet, PDF (2/6 Pages) STMicroelectronics – N - CHANNEL 250V - 0.95ohm - 4A - DPAK/IPAK PowerMESHO MOSFET

STD4NB25
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
3.12
100
1.5
275
o_C/W
oC/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 ^oC, ID = IAR, VDD = 50 V)
Max Value
4
75
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
250
Typ.
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID =2 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ. Max.
4
5
Unit
V
0.95 1.1
Ω
4
A
DYNAMIC
Symbol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =2 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
0.7
Typ. Max.
1.6
Unit
S
260 350
pF
70
100
pF
9
13
pF
2/6