STD40NF06LZ Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 60V - 0.020 ohm - 40A DPAK Zener-Protected STripFET™ II POWER MOSFET

STD40NF06LZ
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 30 V
I_D = 20 A
17
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 4.5 V
75
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
V_DD =48 V I_D =40 A V_GS=10V
54
nC
Q_gs
Gate-Source Charge
11
nC
Q_gd
Gate-Drain Charge
12
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 30V
I_D = 20 A
R_G = 4.7Ω,
V_GS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
38
23
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 40A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %}
(_{•)Pulse width limited by safe operating area.}
I_SD = 40 A
di/dt = 100A/µs
V_DD = 30 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
66
142
4.3
Max.
40
160
1.6
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8