STD40NF06LZ Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 60V - 0.020 ohm - 40A DPAK Zener-Protected STripFET™ II POWER MOSFET

STD40NF06LZ
N-CHANNEL 60V - 0.020 Ω - 40A DPAK
Zener-Protected STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD40NF06LZ
60 V < 25 mΩ 40 A
s TYPICAL R_DS(on) = 0.020Ω
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s LOGIC LEVEL GATE DRIVE
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
s BUILT-IN ZENER DIODES TO IMPROVE ESD
PROTECTION UP TO 2kV
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITOTS,
COMPUTER AND INDUSTRIAL
APPLICATION
s WELDING EQUIPMENT
s AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(•)
P_tot
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
V_ESD(G-S) Gate-source ESD(HBM-C=100pF, R=15kΩ)
dv/dt⁽¹⁾ Peak Diode Recovery voltage slope
E_AS(2)
Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
60
60
± 16
40
28
160
100
0.67
± 2.5
9
450
Unit
V
V
V
A
A
A
W
W/°C
kV
V/ns
mJ
-55 to 175
°C
((12))_{ISSDta≤rt4in0gAT, dj =i/d2t5≤1oC00AI/Dµs=,}
VDD
20A
≤
V(BR)DSS, Tj
VDD = 45V
≤
TJMAX_.
October 2002
1/8
.