STD40N2LH5 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET

STD40N2LH5 - STU40N2LH5
2
Electrical characteristics
Electrical characteristics
(T_CASE = 25°C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
Voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250 µA, V_GS= 0
V_DS = 25 V
V_DS = 25 V, T_C = 125 °C
V_GS = ± 22 V
V_DS= V_GS, I_D = 250 µA
V_GS= 10 V, I_D= 20 A
SMD version
V_GS= 10 V, I_D= 20 A
V_GS= 5 V, I_D= 20 A
SMD version
V_GS= 5 V, I_D= 20 A
Min. Typ. Max. Unit
25
V
1 µA
10 µA
±100 nA
1
V
0.01 0.012 Ω
0.0106 0.0126 Ω
0.0135 0.017 Ω
0.0141 0.0176 Ω
Table 5. Dynamic
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Q_gs1
Q_gs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V_th gate-to-source
charge
Post V_th gate-to-source
charge
R_G Gate input resistance
Test conditions
V_DS = 25 V, f=1 MHz,
V_GS = 0
V_DD=15 V, I_D = 40 A
V_GS = 5 V
(Figure 3)
V_DD=15 V, I_D = 40 A
V_GS = 5 V
(Figure 8)
f=1 MHz gate bias
Bias= 0 test signal
level=20 mV
open drain
Min Typ. Max. Unit
840
pF
180
pF
29
pF
8
nC
TBD
nC
TBD
nC
TBD
nC
TBD
nC
1.1
Ω
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