STD40N2LH5 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET

Features
STD40N2LH5
STU40N2LH5
N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK
STripFET™ V Power MOSFET
Preliminary Data
Type
STD40N2LH5
STU40N2LH5
V_DSS
25 V
25 V
R_DS(on) max
0.012 Ω
0.0126 Ω
I_D
40 A
40 A
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This product utilizes the 5^th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available R_DS(on)*Q_g, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD40N2LH5
STU40N2LH5
Marking
40N2LH5
40N2LH5
Package
DPAK
IPAK
Packaging
Tape and reel
Tube
September 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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