STD3NC50 Datasheet, PDF (3/7 Pages) STMicroelectronics – N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET

STD3NC50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
Pa ram et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 300 V ID = 1.5 A
R_G = 4.7 Ω
V_GS = 10 V
Q_g
Total Gate Charge
V_DD = 480 V I_D = 3 A V_GS = 10 V
Q _gs Gat e-Source Charge
Q_gd Gate-Drain Charge
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 400 V I_D = 3 A
R_G = 4.7 Ω V_GS = 10 V
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 3 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 3 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
11
8
Max.
Unit
ns
ns
15
21
nC
6.5
nC
5
nC
Min.
T yp.
8
5
14
Max.
Unit
ns
ns
ns
Min.
T yp.
Max.
3
12
Unit
A
A
1.6
V
245
ns
980
µC
8
A
3/7