STD3NC50 Datasheet, PDF (1/7 Pages) STMicroelectronics – N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET

®
STD3NC50
N - CHANNEL 500V - 2.4Ω - 3A TO-251/TO-252
PowerMESH™ ΙΙ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST D3N C50
500 V < 2.7 Ω
3A
s TYPICAL RDS(on) = 2.4 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL.
PRELIMINARY DATA
3
3
2
1
1
DESCRIPTION
The PowerMESH™ ΙΙ is the evolution of the first
generation of MESH OVERLAY™ . The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
DPAK
TO-252
(Suffix ”T4”)
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
V_GS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM (•) Drain Current (pulsed)
P_tot Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
500
500
± 30
3.2
2
12.8
60
0.48
4
-65 to 150
150
( 1) ISD ≤3 A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /^o C
V/ns
o_C
o_C
January 2000
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