STD35NF3LL Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 30V - 0.014 ohm - 35A IPAK/DPAK STripFET™ II POWER MOSFET

STD35NF3LL/STD35NF3LL-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 15 V
I_D = 17.5 A
17
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 4.5 V
100
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 24 V I_D = 35 A V_GS= 5V
12.5
17
nC
4.2
nC
5.2
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V
I_D = 17.5 A
R_G = 4.7 Ω
V_GS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
20
21
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 35 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 35 A
di/dt = 100A/µs
V_DD = 15 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
35
44
2.5
Max.
35
140
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/10