STD30NF06 Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET™ II POWER MOSFET

STD30NF06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 30 V
I_D = 19 A
20
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
100
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 48V I_D = 38A V_GS= 10V
43
58
nC
9.5
nC
15
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 30 V
I_D = 19 A
R_G = 4.7Ω, V_GS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
50
20
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 28 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 28 A
di/dt = 100A/µs
V_DD = 30 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
95
260
5.5
Max.
28
112
1.5
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/10