STD30NF06 Datasheet, PDF (2/10 Pages) STMicroelectronics – N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET™ II POWER MOSFET

STD30NF06
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.14
Rthj-amb Thermal Resistance Junction-ambient
Max
100
T_l
Maximum Lead Temperature For Soldering Purpose
275
ELECTRICAL CHARACTERISTICS (T_case = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
60
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 100°C
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
°C/W
°C/W
°C
Max.
Unit
V
1
µA
10
µA
±100
nA
ON ^(*)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
I_D = 15 A
Min.
2
Typ.
0.020
Max.
4
0.028
Unit
V
Ω
DYNAMIC
Symbol
g_fs ^(*)
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS = 15 V
I_D = 15 A
V_DS = 25V, f = 1 MHz, V_GS = 0
Min.
Typ.
40
1750
220
70
Max.
Unit
S
pF
pF
pF
2/10