STD30NE06 Datasheet, PDF (3/5 Pages) STMicroelectronics – N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET

STD30NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 30 V
RG =4.7 Ω
ID = 22 A
VGS = 10 V
Qg
Total Gate Charge
VDD =48V ID = 45 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Min.
Typ.
27
100
Max.
50
135
Unit
ns
ns
60
80
nC
18
nC
17
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 45 A
RG =4.7 Ω VGS = 10 V
Min.
Typ.
20
45
72
Max.
27
60
100
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 45 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 45 A
VDD = 30 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
Typ.
Max.
30
120
Unit
A
A
1.5
V
70
ns
210
µC
6
A
3/5