STD30NE06 Datasheet, PDF (2/5 Pages) STMicroelectronics – N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET

STD30NE06
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
2.72
100
1.5
275
o_C/W
oC/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 ^oC, ID = IAR, VDD = 25 V)
Max Value
30
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc =125 ^oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 15 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
Max.
4
Unit
V
0.025 0.030 Ω
30
A
DYNAMIC
Symbol
gfs (∗)
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =15 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
15
Typ.
25
Max.
Unit
S
2700 3500 pF
330 450 pF
68
90
pF
2/5