STD2NK70Z Datasheet, PDF (3/12 Pages) STMicroelectronics – N-CHANNEL 700 V - 6 W - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

STD2NK70Z - STD2NK70Z-1
TABLE 7: ELECTRICAL CHARACTERISTICS (T_CASE =25°C UNLESS OTHERWISE SPECIFIED)
On /Off
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
V(BR)DSS Drain-source Breakdown
ID = 1 mA, VGS = 0
700
V
Voltage
I_DSS
Zero Gate Voltage
Drain Current (VGS = 0)
V_DS = Max Rating
VDS = Max Rating, TC = 125°C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10 µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
R_DS(on) Static Drain-source On
Resistance
V_GS = 10 V, I_D = 0.8 A
6
7
Ω
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Coss eq.(3)
Ciss
Coss
Crss
td(on)
tr
t_d(off)
t_f
Qg
Q_gs
Q_gd
Equivalent Output
Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDS = 15 V,
I_D = 0.8 A
VGS = 0 V, VDS = 0 to 560 V
VDS = 25 V, f = 1 MHz, VGS = 0
VDD = 350 V, ID = 0.8 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
VDD = 560 V, ID = 0.8 A,
V_GS = 10 V
(see Figure 20)
Min.
Typ.
1.4
Max. Unit
S
17
280
pF
35
pF
6.5
pF
7
ns
17
ns
20
ns
35
ns
11.4
15
nC
2
nC
6.8
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I_SD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
1.6
A
6.4
A
V_SD (1) Forward On Voltage
I_SD = 1.6 A, V_GS = 0
1.6
V
trr
Qrr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.6, di/dt = 100 A/µs
VDD =50 V, Tj = 25°C
(see Figure 18)
334
ns
918
µC
5.5
A
trr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.6, di/dt = 100 A/µs
V_DD = 50 V, T_j = 150°C
(see Figure 18)
350
ns
1050
µC
6
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(2) Pulse width limited by safe operating area
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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