STD2NK70Z Datasheet, PDF (2/12 Pages) STMicroelectronics – N-CHANNEL 700 V - 6 W - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

STD2NK70Z - STD2NK70Z-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 KΩ)
VGS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(*) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
VESD(G-S) Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(*) Pulse width limited by safe operating area
(1) ISD ≤ 1.6 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
T_l
Maximum Lead Temperature For Soldering Purpose
Value
700
700
± 30
1.6
1
6.4
45
0.36
2000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
2.78
°C/W
100
°C/W
300
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
E_AS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
1.6
110
Unit
A
mJ
Table 6: Gate-Source Zener Diode
Symbol
Parameter
Test Condition
Min.
BVGSO Gate-Source Breakdown Igs= ± 1mA (Open Drain)
30
Voltage
Typ.
Max
Unit
A
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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