STD2NC50 Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh™II MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 250V, I_D = 1.4 A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
V_DD = 400V, I_D = 2.8 A,
V_GS = 10V
Test Conditions
V_DD = 400V, I_D = 2.8 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 2.2 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 2.8A, di/dt = 100A/µs,
V_DD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STD2NC50 / STD2NC50-1
Min. Typ. Max. Unit
10
ns
10
ns
10
13.5
nC
2.5
nC
4.5
nC
Min.
Typ.
10
8
20
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
2.2
A
8.8
A
1.6
V
380
ns
2200
nC
11.5
A
Safe Operating Area
Thermal Impedence
3/10