STD2NC50 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh™II MOSFET

STD2NC50
STD2NC50-1
N-CHANNEL 500V - 3Ω - 2.2A DPAK/IPAK
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD2NC50
STD2NC50-1
500 V
500 V
<4Ω
<4Ω
2.2 A
2.2 A
s TYPICAL R_DS(on) = 3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
1
DPAK
3
2
1
IPAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T_C = 25°C
I_D
I_DM (1)
Drain Current (continuos) at T_C = 100°C
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2001
Value
Unit
500
V
500
V
±30
V
2.2
A
1.4
A
8.8
A
45
W
0.36
W/°C
3
V/ns
–60 to 150
°C
150
°C
(1)I_SD ≤ 2.2A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
1/10