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STD2HNK60Z-1 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET
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STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.0 A
4.4
4.8
Ω
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 1.0 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 480V
VDD = 300 V, ID = 1.0 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 480V, ID = 2.0 A,
VGS = 10V
Typ.
1.5
280
38
7
30
10
30
23
50
11
2.25
6
Max. Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
15
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
2.0
A
8.0
A
VSD (1) Forward On Voltage
ISD = 2.0 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2.0 A, di/dt = 100 A/µs
VDD = 20 V, Tj = 25°C
(see test circuit, Figure 5)
178
ns
445
nC
5
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 13 A, di/dt = 100 A/µs
VDD = 20 V, Tj = 150°C
(see test circuit, Figure 5)
200
ns
500
nC
5
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/12
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