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STD2HNK60Z-1 Datasheet, PDF (2/12 Pages) STMicroelectronics – N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET
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STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤ 2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Current Limited by package
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-lead
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
IPAK
2.0
1.26
8
45
0.36
--
IPAK
2.77
100
--
300
Value
TO-220FP
600
600
± 30
2.0 (*)
1.26 (*)
8 (*)
20
0.16
2000
4.5
2500
-55 to 150
TO-92
0.5
0.32
2
3
0.025
--
TO-220FP
6.25
62.5
--
300
TO-92
--
120
40
260
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
2
A
120
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
Min.
BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain)
30
Voltage
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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