STD20NE06 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET

STD20NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
t_r
(di/ dt )on
Q_g
Q_gs
Qgd
P a ra m et er
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG =4.7 Ω
VDD = 48 V
R_G = 47 Ω
V_DD = 48 V
ID = 18 A
VGS = 10 V
ID = 36 A
V_GS =10 V
I_D = 36 A V_GS = 10 V
Min.
Typ .
28
85
250
50
13
18
Max.
40
115
70
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
t_f
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 36 A
R_G =4.7 Ω V_GS = 10 V
Min.
Typ .
12
25
40
Max.
16
35
55
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
I_SD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 20 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 36 A
VDD = 30 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
Typ .
Max.
20
80
Unit
A
A
1.5
V
75
ns
245
nC
6.5
A
Safe Operating Area
Thermal Impedance
3/8