STD20NE06 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET

STD20NE06
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST D20NE06
60 V < 0.040 Ω 20 A
s TYPICAL R_DS(on) = 0.032 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size™ ”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
ID
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM ( •)
P_tot
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
T_stg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(**) Value limited only by the package
January 1998
Value
Uni t
60
V
60
V
± 20
V
20**
A
17
A
80
A
50
0.33
W
W/^oC
7
V/ ns
-65 to 175
o_C
175
o_C
(1) ISD ≤ 36 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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