STD20N20 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET

STP20N20 - STF20N20 - STD20N20
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
g_fs (1) Forward Transconductance V_DS = 25 V_, I_D= 10 A
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V_DS = 25V, f = 1 MHz, V_GS = 0
t_d(on)
t_r
t_d(off)
t_r
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_DD = 100 V, I_D = 10 A,
R_G= 4.7 Ω V_GS = 10 V
(see Figure 17)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 160V, I_D = 20 A,
V_GS = 10V
(see Figure 20)
Min.
Typ.
13
940
197
30
15
30
40
10
28
5.6
14.5
Max. Unit
S
pF
pF
pF
ns
ns
ns
ns
39
nC
nC
nC
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
I_SD
I_SDM (2)
Source-drain Current
Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 20 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 20 A, di/dt = 100A/µs
V_DD = 50V, T_j = 25°C
(see Figure 18)
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 20 A, di/dt = 100A/µs
V_DD = 50V, T_j = 150°C
(see Figure 18)
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Min.
Typ.
Max. Unit
18
A
72
A
1.6
V
155
ns
775
nC
10
A
183
ns
1061
nC
11.6
A
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