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| STD20N20 Datasheet, PDF (2/13 Pages) STMicroelectronics – N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET | |||
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STP20N20 - STF20N20 - STD20N20
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ⤠18A, di/dt ⤠400A/µs, VDD ⤠V(BR)DSS
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl
Maximum Lead Temperature For Soldering
Purpose
(#) When mounted on 1inch² FR-4, 2 Oz copper board.
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
TO-220/DPAK
200
200
± 20
18
11
72
90
0.72
15
TO-220FP
25
0.2
-50 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
TO-220
1.38
62.5
DPAK
1.38
50(#)
300
TO-220FP
5
62.5
°C/W
°C/W
°C
Max Value
Unit
18
A
110
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
200
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10 A
0.10 0.125
â¦
2/13
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