STD1NB80- Datasheet, PDF (3/5 Pages) STMicroelectronics – N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET

STD1NB80-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
t_r
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 0.5A
R_G = 4.7 Ω
V_GS = 10 V
Min.
Typ.
8
10
Max.
12
14
Unit
ns
ns
Q_g
Total Gate Charge
V_DD = 640 V I_D =1.1 A V_GS = 10 V
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
10
14
nC
5
nC
4
nC
SWITCHING OFF
Symbol
t_r(Voff)
t_f
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 640 V I_D = 1.1 A
R_G = 4.7 Ω V_GS = 10 V
Min.
Typ.
40
15
50
Max.
56
21
70
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I_SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 1 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
ISD = 1.1 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
I_RRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
1
4
Unit
A
A
1.6
V
460
ns
1150
nC
5
A
3/5