STD1NB80- Datasheet, PDF (2/5 Pages) STMicroelectronics – N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET

STD1NB80-1
THERMAL DATA
R_thj-case Thermal Resistance Junction-case
Max
2.5
Rthj-amb ^{Thermal Resistance Junction-ambient}
Max
100
Rthc-sink ^{Thermal Resistance Case-Sink}
Typ
1.5
Tl
Maximum Lead Temperature For Soldering Purpose
275
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbol
I_AR
E_AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Max Value
1
90
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V_(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
I_DSS
I_GSS
Zero Gate Voltage
V_DS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 30 V
Tc = 125 ^oC
Min.
800
Typ.
Max.
Unit
V
1
µA
50
µA
± 100 nA
ON (∗)
Symbol
V_GS(th)
R_DS(on)
I_D(on)
Parameter
Test Conditions
Gate Threshold
Voltage
V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 10V I_D =0.5 A
Resistance
On State Drain Current V_DS > I_D(on) x R_DS(on)max
V_GS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
16
20
Ω
1
A
DYNAMIC
Symbol
g_fs (∗)
C_iss
C_oss
C_rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max I_D = 0.5 A
Min.
0.3
Typ.
0.6
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
140 185 pF
22
27
pF
2.5
4
pF
2/5