STD1NB50 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL 500V - 7.5ohm - 1.4A IPAK PowerMESH MOSFET

STD1NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 250 V
ID = 0.7 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 400 V I_D =1.4 A V_GS = 10 V
Min.
Typ.
8
8
Max.
12
12
Unit
ns
ns
9
13
nC
5.5
nC
2.4
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
tf
t_c
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 400 V I_D = 1.4 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
20
22
30
Max.
28
31
42
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 1.4 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 1.4 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
1.4
5.6
Unit
A
A
1.6
V
330
ns
780
nC
4.7
A
Safe Operating Area
Thermal Impedance
3/8