STD1NB50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 500V - 7.5ohm - 1.4A IPAK PowerMESH MOSFET

®
STD1NB50
N - CHANNEL 500V - 7.5Ω - 1.4A IPAK
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST D1NB50
500V
<9Ω
1.4 A
s TYPICAL RDS(on) = 7.5 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR SMD DPAK VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V_DS Drain-source Voltage (V_GS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
V_GS G ate-source Volt age
I_D
Drain Current (continuous) at T_c = 25 ^oC
I_D
Drain Current (continuous) at T_c = 100 ^oC
I_DM (•) Drain Current (pulsed)
P_tot T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 2000
Va l u e
Un it
500
V
500
V
± 36
V
1.4
A
0.91
A
5.6
A
45
0.36
W
W /^o C
3.5
-65 to 150
150
( 1) ISD ≤1.4A, di/dt ≤ 150 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/8