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STD1LNK60Z-1 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
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STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating,
TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.4 A
13
15
Ω
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = V, ID = 0.4 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 480V
VDD = 300V, ID = 0.4 A
RG = 4.7Ω VGS = 10 V
(see Figure 21)
VDD = 480V, ID = 0.8 A,
VGS = 10V
(see Figure 25)
Typ.
0.5
94
17.6
2.8
11
5.5
5
13
28
4.9
1
2.7
Max.
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
6.9
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
0.8
A
2.4
A
VSD (1) Forward On Voltage
ISD = 0.8A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 0.8 A, di/dt = 100A/µs
VDD = 20V, Tj = 25°C
(see Figure 23)
135
ns
216
nC
3.2
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 0.8 A, di/dt = 100A/µs
VDD = 20V, Tj = 150°C
(see Figure 23)
140
ns
224
nC
3.2
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/14
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