STD1LNK60Z-1 Datasheet, PDF (2/14 Pages) STMicroelectronics – N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Table 3: Absolute Maximum ratings
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
T_j
Operating Junction Temperature
T_stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I_SD ≤0.3A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthj-lead Thermal Resistance Junction-lead Max
T_l
Maximum Lead Temperature For Soldering Purpose
(#) When mounted on 1 inch² Fr-4 board, 2 Oz Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Table 6: Gate-Source Zener Diode
Symbol
Parameter
Test Conditions
BV_GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
IPAK
0.8
0.5
3.2
25
0.24
Value
TO-92
600
600
± 30
0.3
0.189
1.2
3
0.025
800
4.5
-55 to 150
SOT-223
0.3
0.189
1.2
3.3
0.026
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
IPAK
5
100
--
275
TO-92
--
120
40
260
SOT-223
--
37.87(#)
--
260
°C/W
°C/W
°C/W
°C
Max Value
Unit
0.8
A
60
mJ
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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