STD1HNC60 Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh™II MOSFET

STD1HNC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 300V, I_D = 1 A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
V_DD = 480V, I_D = 2 A,
V_GS = 10V
Test Conditions
V_DD = 480V, I_D = 2 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
9
ns
8.5
ns
11.3 ^15.5
nC
2.8
nC
5
nC
Min.
Typ.
18
9
27
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 2 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 2A, di/dt = 100A/µs, V_DD
= 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
480
1032
4.3
Max.
2
8
1.6
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedence
3/9