STD1HNC60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh™II MOSFET

STD1HNC60
N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD1HNC60
600 V
<5Ω
2A
s TYPICAL R_DS(on) = 4 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
IPAK
TO-251
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM ⁽¹⁾
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
February 2001
Value
Unit
600
V
600
V
±30
V
2
A
1.3
A
8
A
50
0.4
3.5
–65 to 150
150
W
W/°C
V/ns
°C
°C
(1)ISD ≤ 2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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