STD17NE03L Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL 30V - 0.034ohm - 17A - DPAK/IPAK STripFET POWER MOSFET

STD17NE03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
t_d(on)
t_r
Q_g
Q_gs
Q_gd
Pa ram et e r
Turn-on delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V_DD = 15 V
R_G =4.7 Ω
V_DD = 24 V
I_D = 10 A
V_GS = 5 V
I_D = 22 A V_GS = 5 V
Min.
T yp.
15
70
13
6
6
Max.
18
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 24 V I_D = 20 A
R_G =4.7 Ω V_GS = 5 V
Min.
T yp.
13
33
55
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 17 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 22 A
VDD = 15 V
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
T yp.
Max.
17
68
Unit
A
A
1.5
V
40
ns
0.45
nC
2.2
A
Safe Operating Area
Thermal Impedance
3/9