STD17NE03L Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 30V - 0.034ohm - 17A - DPAK/IPAK STripFET POWER MOSFET

®
STD17NE03L
N - CHANNEL 30V - 0.034Ω - 17A - DPAK/IPAK
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STD17NE03L
30 V < 0.05 Ω 17 A
s TYPICAL RDS(on) = 0.034 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™ ” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V _DS
V _DGR
V_GS
ID
I_D
I_DM (•)
P_tot
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
Value
Un it
30
V
30
V
± 20
V
17
A
12
A
68
A
35
0.23
W
W /^o C
6
V/ns
-65 to 175
o_C
175
o_C
( 1) ISD ≤ 17 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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