STD11NM60ND_10 Datasheet, PDF (3/19 Pages) STMicroelectronics – N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STD/F/I/P/U11NM60ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK/I²PAK,
TO-220/IPAK
TO-220FP
V_DS Drain-source voltage (V_GS=0)
600
V_GS Gate-source voltage
± 25
I_D Drain current (continuous) at T_C = 25°C
10
10 ⁽¹⁾
I_D Drain current (continuous) at T_C = 100°C
6.3
6.3⁽¹⁾
I_DM ⁽²⁾ Drain current (pulsed)
40
40 ⁽¹⁾
P_TOT Total dissipation at T_C = 25°C
90
25
dv/dt ^{(3) Peak diode recovery voltage slope}
40
V_ISO
T_stg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T_C=25°C)
Storage temperature
2500
-55 to 150
T_j Max. operating junction temperature
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 10 A, di/dt ≤ 400 A/µs, V_DD = 80% V_(BR)DSS, peak VDS ≤ V_(BR)DSS
Unit
V
V
A
A
A
W
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 I²PAK DPAK IPAK TO-220FP
R_thj-case
Thermal resistance junction-case
max
R_thj-amb Thermal resistance junction-amb max
R_thj-pcb(1) Thermal resistance junction-pcb max
T_l
Maximum lead temperature for
soldering purposes
1.38
5
°C/W
62.5
100 62.5 °C/W
50
°C/W
300
300
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Doc ID 14625 Rev 2
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