STD11NM60ND_10 Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET
I²PAK, TO-220, TO-220FP, IPAK, DPAK
Features
Order codes V_DSS (@T_jmax) R_DS(on) max I_D
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
650 V
< 0.45 Ω
10 A
10 A⁽¹⁾
10 A
10 A
10 A
1. Limited only by maximum temperature allowed
■ The worldwide best R_DS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
11NM60ND
3
1
DPAK
3
2
1
TO-220
3
2
1
IPAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
DPAK
TO-220FP
I²PAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
Tube
October 2010
Doc ID 14625 Rev 2
1/19
www.st.com
19