STD11NM60N-1 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh™ Power MOSFET

STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
T_J
T_stg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s;T_C = 25 °C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤10A, di/dt ≤400A/µs, V_DD =80% V_(BR)DSS
Value
TO-220/I²PAK
Unit
TO-220FP
DPAK/IPAK
600
V
± 25
V
10
10⁽¹⁾
A
6.3
6.3 ⁽¹⁾
A
40
40⁽¹⁾
A
90
25
0.8
0.2
15
W
W/°C
V/ns
--
2500
V
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
T_l
Maximum lead temperature for soldering
purposes
Value
TO-220 / I²PAK
Unit
TO-220FP
DPAK / IPAK
1.38
5
62.5
°C/W
°C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_J max)
Single pulse avalanche energy
E_AS
(starting T_J = 25 °C, I_D = I_AS, V_DD = 50 V)
Max value
3.5
200
Unit
A
mJ
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