STD11NM60N-1 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh™ Power MOSFET

STD11NM60N-1 - STB11NM60N-1
STD11NM60N-STP11NM60N-STF11NM60N
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I²PAK - DPAK
second generation MDmesh™ Power MOSFET
Features
Type
V_DSS
(@T_Jmax)
STB11NM60N-1 650 V
STD11NM60N 650 V
STD11NM60N-1 650 V
STF11NM60N
650 V
STP11NM60N 650 V
R_DS(on)
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
I_D
10 A
10 A
10 A
10 A⁽¹⁾
10 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
3
2
1
TO-220
3
1
DPAK
123
I²PAK
3
2
1
IPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB11NM60N-1
B11NM60N
STD11NM60N-1
D11NM60N
STD11NM60N
D11NM60N
STP11NM60N
STF11NM60N
P11NM60N
F11NM60N
Package
I²PAK
IPAK
DPAK
TO-220
TO-220FP
Packaging
Tube
Tube
Tape & reel
Tube
Tube
October 2007
Rev 3
1/18
www.st.com
18