STD10NM60N Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
V_GS Gate- source voltage
± 25
I_D
Drain current (continuous) at T_C = 25 °C
10
10 ⁽¹⁾
10
I_D
Drain current (continuous) at T_C = 100 °C
5
5 ⁽¹⁾
5
I_DM ⁽²⁾ Drain current (pulsed)
32
32 ⁽¹⁾
32
P_TOT Total dissipation at T_C = 25 °C
dv/dt⁽³⁾ Peak diode recovery voltage slope
70
25
70
15
V_ISO
T_J
T_stg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T_C=25 °C)
Operating junction temperature
Storage temperature
2500
- 55 to 150
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I_SD ≤10 A, di/dt ≤400 A/µs, V_DS peak ≤V_(BR)DSS, V_DD = 80% V_(BR)DSS.
V
A
A
A
W
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-amb
R_thj-pcb
T_J
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220 TO-220FP IPAK DPAK
1.79
5
62.50
1.79
100
50
°C/W
°C/W
°C/W
300
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAS, VDD=50 V)
Value
Unit
4
A
200
mJ
Doc ID 15764 Rev 5
3/17