STD10NM60N Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

STD10NM60N, STF10NM60N
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK
MDmesh™ II Power MOSFET
Features
Order codes
V_DSS
@T_Jmax
STD10NM60N
R_DS(on)
max.
STF10NM60N
STP10NM60N
650 V
< 0.55 Ω
STU10NM60N
I_D
10 A
P_w
70 W
25 W
70 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are N-channel 600 V Power
MOSFET realized using the second generation of
MDmesh^™ technology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH^™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
IPAK
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
Marking
10NM60N
10NM60N
10NM60N
10NM60N
Package
DPAK
TO-220FP
TO-220
IPAK
!-V
Packaging
Tape and reel
Tube
Tube
Tube
November 2010
Doc ID 15764 Rev 5
1/17
www.st.com
17