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| STC06IE170HV Datasheet, PDF (3/8 Pages) STMicroelectronics – Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17Ω | |||
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STC06IE170HV
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS=VGS=0V)
VCS(SS)=1700V
100 µA
Base-source current
IBS(OS) (IC=0, VGS=0V)
VBS(OS)=30V
10 µA
Source-base current
ISB(OS) (IC=0, VGS=0V)
VSB(OS)=17V
100 µA
IGS(OS)
Gate-source leakage
(VBS=0V)
VGS = ±17V
100 nA
VCS(ON)
Collector-source ON voltage VGS=10V; IC =6; IB =1.2A
VGS=10V; IC =2; IB =0.2A
1
V
0.6
V
hFE DC current gain
VCS=1V; VGS=10V; IC =6A
5.5
VCS=1V; VGS=10V; IC =2A
11
VBS(ON) Base-source ON voltage
VGS=10V; IC =6; IB =1.2A
VGS=10V; IC =2; IB =0.12A
1.3
V
0.9
V
VGS(th) Gate threshold voltage
VBS=VGS; IB =250µA
2
3
4
V
Ciss Input capacitance
VCS=25V; VGS=0V; f =1MHz
TBD
pF
QGS(tot) Gate-source charge
VGS=10V
TBD
nC
Inductive load
ts
Storage time
tf
Fall time
TBD
TBD
ns
Inductive load
ts
Storage time
tf
Fall time
TBD
TBD
ns
VCS(dyn)
Collector-source dynamic
voltage (500ns)
TBD
TBD
V
VCS(dyn)
Collector-source dynamic
voltage (1µs)
TBD
TBD
V
Maximum collector-source
VCSW voltage switched without
RG=47â¦; hFE=5; IC=6A
1700
V
snubber
3/8
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