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| STC06IE170HV Datasheet, PDF (1/8 Pages) STMicroelectronics – Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17Ω | |||
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Features
STC06IE170HV
Emitter switched bipolar transistor
ESBT® 1700V - 6A - 0.15â¦
PRELIMINARY DATA
VCS(ON)
0.7V
IC
RCS(ON)
6A
0.15â¦
â High voltage / high current cascode
configuration
â Low equivalent on resistance
â Very fast-switch, up to 150 kHz
â Squared RBSOA, up to 1700 V
â Very low CISS driven by RG = 47â¦
â Very low turn-off cross over time
Description
The STC06IE170HV is manufactured in
Monolithic ESBT technology, aimed to provide the
best performance in High Frequency / High
voltage applications. It is designed for use in Gate
Driven based topologies.
Application
â Auxiliary SMPS for three phase mains
1 234
TO247-4L HV
Internal schematic diagram
Order code
Part number
STC06IE170HV
Marking
C06IE170HV
Package
TO247-4L HV
Packaging
Tube
May 2007
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/8
www.st.com
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