STB90NF03L Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STB90NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 15V, I_D = 45 A
R_G = 4.7Ω V_GS = 4.5 V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
V_DD = 24V, I_D =90A,V_GS = 5V
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
t_d(off)
Turn-off-Delay Time
t_f
Fall Time
Test Conditions
V_DD = 15V, I_D = 45 A,
R_G = 4.7Ω, V_GS = 4.5 V
(see test circuit, Figure 3)
Min.
Min.
Typ.
30
200
35
10
18
Typ.
50
105
Max.
47
Max.
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (1) Source-drain Current (pulsed)
V_SD (2) Forward On Voltage
I_SD = 90 A, V_GS = 0
t_rr
Reverse Recovery Time
I_SD = 90 A, di/dt = 100A/µs,
V_DD = 15V, T_j = 150°C
(see test circuit, Figure 5)
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
90
A
360
A
1.3
V
80
ns
90
nC
2.5
A
Safe Operating Area
Thermal Impedence
3/8