STB90NF03L Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STB90NF03L
N-CHANNEL 30V - 0.0056Ω - 90A D²PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB90NF03L
30 V < 0.0065 Ω 90 A
s TYPICAL R_DS(on) = 0.0056 Ω
s TYPICAL Q_g = 35 nC @ 5V
s OPTIMAL R_DS(on) x Q_g TRADE-OFF
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size™” strip-based process. The resulting
transistor shows the best trade-off between on-re-
sistance and gate charge. When used as high and
low side in buck regulators, it gives the best perfor-
mance in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficiency are
of paramount importance.
3
1
D²PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
October 2001
Value
30
30
± 18
90
65
360
150
0.73
– 55 to 175
Unit
V
V
V
A
A
A
W
W/°C
°C
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