STB85NF3LL Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFET™II POWER MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 15V, I_D = 30A
R_G = 4.7Ω V_GS = 4.5V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 24V, I_D = 60A,
V_GS = 4.5V
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off-Delay Time
Fall Time
t_d(off)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 15V, I_D = 30A,
R_G = 4.7Ω, V_GS = 4.5V
(see test circuit, Figure 3)
Vclamp =24V, I_D =30A
R_G = 4.7Ω, V_GS = 4.5V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 85A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 85A, di/dt = 100A/µs,
V_DD = 15V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STB85NF3LL
Min. Typ. Max. Unit
22
ns
130
ns
30
40
nC
9
nC
12.5
nC
Min.
Typ.
36.5
36.5
Max.
Unit
ns
ns
32
ns
23
ns
40
ns
Min. Typ. Max. Unit
85
A
340
A
1.3
V
65
ns
105
nC
3.4
A
Safe Operating Area
Thermal Impedence
3/9