STB80NE03L-06 Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET™ POWER MOSFET

STB80NE03L-06 / STB80NE03L-06-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 15 V, I_D = 40 A
R_G = 4.7Ω V_GS = 4.5 V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 24 V, I_D = 80A,
V_GS = 5V
Min.
Typ.
40
260
95
30
44
Max.
55
350
130
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 24 V, I_D = 80 A,
R_G = 4.7Ω, V_GS = 5V
(see test circuit, Figure 3)
Min.
Typ.
70
165
250
Max.
95
220
340
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 80 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 80 A, di/dt = 100A/µs,
V_DD = 15 V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
75
0.14
4
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedence
3/9