STB80NE03L-06 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET™ POWER MOSFET

STB80NE03L-06
STB80NE03L-06-1
N-CHANNEL 30V - 0.005Ω - 80A D²PAK / I²PAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
STB80NE03L-06
STB80NE03L-06-1
30 V
30 V
< 0.006 Ω
< 0.006 Ω
s TYPICAL R_DS(on) = 0.005 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE 100°C
s 100% AVALANCHE TESTED
I_D
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
1
D²PAK
123
I²PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL,AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
February 2003
Value
30
30
± 20
80
60
320
150
1
7
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 175
°C
(1) I_SD ≤804A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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