STB75NH02L Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0062W -75A - D2PAK STripFET™ III POWER MOSFET

STB75NH02L
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g_fs (3) Forward Transconductance V_DS = 15 V _, I_D = 30 A
TBD
S
C_iss
Input Capacitance
V_DS = 15 V, f = 1 MHz, V_GS = 0
2000
pF
C_oss
Output Capacitance
420
pF
C_rss
Reverse Transfer
Capacitance
210
pF
R_g
Gate Input Resistance
f= 1 MHz Gate DC Bias= 0
Test Signal Level= 20 mV
Open Drain
1
Ω
SWITCHING ON
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
Q_g
Q_gs
Q_gd
Q_oss (4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off-Delay Time
Fall Time
Test Conditions
V_DD = 10 V, I_D = 37.5 A
R_G = 4.7Ω V_GS = 10 V
(see test circuit, Figure 3)
V_DD = 10 V, I_D =75 A,
V_GS = 10 V
V_DS = 16 V, V_GS = 0
Test Conditions
V_DD = 10 V, I_D = 37.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see test circuit, Figure 3)
Min.
Typ.
TBD
TBD
Max.
Unit
ns
ns
35
47
nC
TBD
nC
TBD
nC
TBD
nC
Min.
Typ.
TBD
TBD
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (1) Source-drain Current (pulsed)
V_SD (3) Forward On Voltage
I_SD = 37.5 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 75 A, di/dt = 100A/µs,
V_DD = 15V, T_j = 150°C
(see test circuit, Figure 5)
1. Garanted when external R_g = 4.7 Ω and t_f < t_f max
2. Starting T_j = 25°C, I_D = 25A, V_DD = 15V
3. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4. Qoss = Coss*∆ Vin, Coss = Cgd+Cds. See Appendix A
5. Pulse width limited by safe operating area
Min.
Typ.
TBD
TBD
TBD
Max.
75
300
1.3
Unit
A
A
V
ns
nC
A
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