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| STB75NH02L Datasheet, PDF (2/8 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0062W -75A - D2PAK STripFET™ III POWER MOSFET | |||
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STB75NH02L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vspike(1) Drain-source Voltage Rating
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (5) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
Value
30
24
24
± 20
75
53
300
85
1
TBD
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl
Maximum Lead Temperature for Soldering Purpose
1
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
V(BR)DSS Drain-source
ID = 25 mA, VGS = 0
24
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 20V
VDS = 20V, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
1
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 30 A
VGS = 5 V, ID = 30 A
0.0062 0.008
â¦
0.008 0.014
â¦
2/8
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